NCEP015N30GU mosfet equivalent, n-channel super trench ii power mosfet.
* VDS =30V,ID =170A RDS(ON)=1.3mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V
RDS(ON) and Qg. This device is ideal for high-frequency switching and synchr.
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of
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