NCEP095N10AG Datasheet, MOSFET, NCE Power Semiconductor

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NCEP095N10AG Features and benefits

* VDS =100V,ID =60A RDS(ON)=8.5mΩ , typical@ VGS=10V RDS(ON)=10.5mΩ , typical@ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistanc.

NCEP095N10AG Application

that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.

NCEP095N10AG Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.

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