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2SJ621 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Datasheet Details

Part number 2SJ621
Manufacturer NEC
File Size 110.61 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet 2SJ621 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 3 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) 1.5 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.