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NP32N055HDE - N-Channel Power MOSFET

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A).
  • Low Ciss : Ciss = 1300 pF TYP.

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Datasheet Details

Part number NP32N055HDE
Manufacturer NEC
File Size 204.41 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP32N055HDE Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design.
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