* Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
* Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10
 .

of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES
* Super Low On-Resistance RDS(on)1 = 10.5 m.

This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES
* Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
* Low Ciss.

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