* Low on-resistance RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) 1.44 RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
* 0.05 0.8 RDS(on)3 = 14.0 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A)
* Low Ciss: Ciss = 1400 pF (TYP.)
UPA1707
NEC
58.08 KB
N-channel power mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1707 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) is N-Channel MOS Field.
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