UPA1707 use equivalent, switching n-channel power mos fet industrial use.
* Low on-resistance RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 ±0.3 4..
of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on.
This product Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0.
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