* Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) 1.44 1 5.37 MAX. +0.10
  –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 7.0 mΩ (TYP..

of notebook computers. 8 PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES
* Super Lo.

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. 8 PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES
* Super Low on-resista.

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