switching n-channel power mosfet.
* 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
1.44
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
* Low Ciss : Ci.
and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
8
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
8
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* 2.5 V gate drive and low on-re.
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