* 2.5-V gate drive and low on-resistance 1.44 RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
  –0.05 RDS.

and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES
*.

This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES
* 2.5-V gate drive and low on-resi.

UPA1700A

UPA1701A

UPA1703

UPA1705

UPA1706

UPA1707

UPA1708

UPA1709

UPA1715

UPA1716

UPA1717

UPA1720

UPA1721