n-channel power mosfet.
* Super low on-state resistance
1.44
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
1.8 Max.
1 5.37 Max.
4
6.0 ±0.3 4.4
+0.10
–0.05
0.8
RDS(on.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Super low on-sta.
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