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  NEC Electronic Components Datasheet  

UPA1708 Datasheet

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1708
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
switch.
FEATURES
Low on-resistance
RDS(on)1 = 18.0 m(TYP.) (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 28.0 m(TYP.) (VGS = 4.5 V, ID = 3.5 A)
Low Ciss : Ciss = 730 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1708G
Power SOP8
PACKAGE DRAWINGS (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVARENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage Note1
VDSS 40 V
Gate to Source Voltage Note2
VGSS ±25 V
Drain Current (DC)
Drain Current (pulse) Note3
Total Power Dissipation (TA = 25°C) Note4
ID(DC)
ID(pulse)
PT
±7.0
±28
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. VGS = 0 V
2. VDS = 0 V
3. PW 10 µs, Duty Cycle 1 %
4. Mounted on ceramic substrate of 1200 mm2 x 1.7mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. G13603EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
©
1998


  NEC Electronic Components Datasheet  

UPA1708 Datasheet

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

No Preview Available !

µ PA1708
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 3.5 A
18.0 24.0 m
RDS(on)2 VGS = 4.5 V, ID = 3.5 A
28.0 40.0 m
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
1.5 2.0 2.5 V
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 3.5 A
4.0 8.4
S
Drain Leakage Current
IDSS VDS = 40 V, VGS = 0 V
10 µA
Gate to Source Leakage Current
IGSS VGS = ±25 V, VDS = 0 V
±10 µA
Input Capacitance
Ciss VDS = 10 V
730 pF
Output Capacitance
Coss
VGS = 0 V
340 pF
Reverse Transfer Capacitance
Crss f = 1 MHz
150 pF
Turn-on Delay Time
td(on)
ID = 3.5 A
16 ns
Rise Time
tr VGS(on) = 10 V
96 ns
Turn-off Delay Time
td(off)
VDD = 20 V
49 ns
Fall Time
tf RG = 10
30 ns
Total Gate Charge
QG ID = 7.0 A
20 nC
Gate to Source Charge
QGS
VDD = 32 V
2.5 nC
Gate to Drain Charge
QGD
VGS = 10 V
6.8 nC
Body Diode Forward Voltage
VF(S-D) IF = 7.0 A, VGS = 0 V
0.8 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 7.0 A, VGS = 0 V
Qrr di/dt = 100 A/ µs
32 ns
25 nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2


Part Number UPA1708
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Maker NEC
Total Page 8 Pages
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