UPA1708 use equivalent, switching n-channel power mos fet industrial use.
* Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
1.44
1 5.37 MAX.
+0.10
–0.05
4
6.0 ±0.3 4.4 0.8
RDS(on)2 = 28.0 mΩ (TYP.) (V.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.
8
PACKAGE DRAWINGS (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VG.
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