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P5515BD, P5515BD-NIKO Datasheet - NIKO-SEM

P5515BD N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 55mΩ ID 24.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 1mH TC = 25 °C TC = 100 °C.

P5515BD-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: P5515BD, P5515BD-NIKO. Please refer to the document for exact specifications by model.
P5515BD Datasheet Preview Page 2 P5515BD Datasheet Preview Page 3

Datasheet Details

Part number:

P5515BD, P5515BD-NIKO

Manufacturer:

NIKO-SEM

File Size:

159.00 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: P5515BD, P5515BD-NIKO.
Please refer to the document for exact specifications by model.

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TAGS

P5515BD P5515BD-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

P5515BD Distributor