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A3M36SL037I Datasheet Airfast Power Amplifier

Manufacturer: NXP Semiconductors

Overview: A3M36SL037 Airfast Power Amplifier Module with Autobias Control Rev. 0 — January 2023 Data Sheet: Technical Data The A3M36SL037 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI. 3400–3800 MHz Typical LTE Performance: Pout = 5 W Avg., VDD = 27 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1 Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) 3410 MHz 29.7 –29.1 38.5 3600 MHz 29.2 –35.6 37.7 3790 MHz 29.0 –33.6 37.4 1. All data measured with device soldered in NXP reference circuit.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Advanced high performance in-package Doherty.
  • Fully matched (50 ohm input/output, DC blocked).
  • Designed for low complexity digital linearization systems.
  • Autobias on power up.
  • Temperature sensing.
  • Digital interface (I2C or SPI).
  • Embedded registers and DACs for setting bias conditions.
  • Tx Enable control pin for TDD operation A3M36SL037I A3M36SL037S 3400.
  • 3800 MHz, 29 dB, 5 W Avg. Airfast Power Amplifier Module with A.

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