BF1107W Datasheet - NXP

N-channel single gate MOS-FETs

BF1107W General Description

The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against ex.

BF1107W Datasheet (54.54 KB)

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BF1107W

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NXP ↗

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N-channel single gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product speciﬁcation Supersedes data of 1998 Jun 22 1999 May 14 P.

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BF1107W N-channel single gate MOS-FETs NXP

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BF1107W General Description

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