Silicon RF switches
• Specially designed for low loss RF switching
up to 1 GHz.
• Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.
handbook, 2 c4olumns
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of the MOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
Marking code: NGp.
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
1 FET gate; diode anode
2 diode cathode
3 source; note 1
4 drain; note 1
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
Marking code: NHp.
Fig.2 Simplified outline (SOT143R).
RS = RL = 50 Ω;
f ≤ 1 GHz
VCS = 0; ID = 1 mA
ID = 20 µA; VDS = 1 V
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18