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NXP Semiconductors Electronic Components Datasheet

BF1108R Datasheet

Silicon RF switches

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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R
Silicon RF switches
Product specification
Supersedes data of 1999 Aug 19
1999 Nov 18


NXP Semiconductors Electronic Components Datasheet

BF1108R Datasheet

Silicon RF switches

No Preview Available !

Philips Semiconductors
Silicon RF switches
Product specification
BF1108; BF1108R
FEATURES
Specially designed for low loss RF switching
up to 1 GHz.
APPLICATIONS
Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
DESCRIPTION
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of the MOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
Marking code: NGp.
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
PINNING
PIN DESCRIPTION
1 FET gate; diode anode
2 diode cathode
3 source; note 1
4 drain; note 1
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
SYMBOL
s21(on)2
s21(off)2
RDSon
VGSoff
PARAMETER
losses (on-state)
isolation (off-state)
drain-source on-resistance
pinch-off voltage
2
Top view
1
MSB035
Marking code: NHp.
Fig.2 Simplified outline (SOT143R).
CONDITIONS
RS = RL = 50 ;
f 1 GHz
VCS = 0; ID = 1 mA
ID = 20 µA; VDS = 1 V
MIN.
30
TYP.
12
3
MAX. UNIT
2 dB
dB
20
4 V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18
2


Part Number BF1108R
Description Silicon RF switches
Maker NXP
Total Page 12 Pages
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