BFU530W Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18.5 dB at 900 MHz
- 11 GHz fT silicon technology
- Part: BFU530W
- Description: NPN wideband silicon RF transistor
- Manufacturer: NXP Semiconductors
- Size: 296.80 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BFU530 | NPN wideband silicon RF transistor |
| BFU530A | NPN wideband silicon RF transistor |
| BFU530X | NPN wideband silicon RF transistor |
| BFU530XR | NPN wideband silicon RF transistor |
| BFU510 | NPN SiGe wideband transistor |