BFU730LX Datasheet PDF (NPN wideband silicon germanium RF transistor)

BFU730LX - NPN wideband silicon germanium RF transistor

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm.
Low noise high gain microwave transistor.
Noise figure (NF) = 0.75 dB at 6 GHz.
High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz.
Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:.
input third-order intercept point (IP3i) = 15 dBm.
input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See.

Datasheet Details

Part number	BFU730LX
Manufacturer	NXP Semiconductors
File Size	124.23 KB
Description	NPN wideband silicon germanium RF transistor
Datasheet	BFU730LX Datasheet
Additional preview pages of the BFU730LX datasheet.

📁 Similar Datasheet

BFU730F - wideband silicon germanium RF transistor (NXP Semiconductors)

BFU710F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)

BFU725F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)

BFU760F - wideband silicon germanium RF transistor (NXP Semiconductors)

BFU450C - FILTERS (Murata Electronics)

BFU450C4N - FILTERS (Murata Electronics)

BFU450K3 - FILTERS (Murata Electronics)

BFU580Q - NPN Transistor (INCHANGE)

BFU630F - NPN wideband silicon RF transistor (NXP Semiconductors)

BFU660F - NPN wideband silicon RF transistor (NXP Semiconductors)

Full PDF Text Transcription

Click to expand full text

627& BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm  Low noise high gain microwave transistor  Noise figure (NF) = 0.75 dB at 6 GHz  High maximum power gain (Gp(max)) of 15.

Published: Mar 23, 2016 |