Download BLC6G22-130 Datasheet PDF
BLC6G22-130 page 2
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BLC6G22-130 Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.