BLF647 Datasheet, NXP

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designe.

* Communication transmitter applications in the HF to 800 MHz frequency range. 3 4 MBK777 BLF647 PINNING - SOT540A .

1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common so.