BLF647 Datasheet - NXP

UHF power LDMOS transistor

BLF647 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation (HF to 800 MHz)

* Internal input damping for excellent stability over the wh

BLF647 General Description

1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB .

BLF647 Datasheet (127.71 KB)

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BLF647

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NXP ↗

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127.71 KB

Description:

Uhf power ldmos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product speciﬁcation Supersedes data of 2001 Aug 02 2001 Nov 27 Philip.

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BLF647 UHF power LDMOS transistor NXP

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BLF647 Features

BLF647 General Description

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