• Part: BLF645
  • Description: Broadband power LDMOS transistor
  • Manufacturer: NXP Semiconductors
  • Size: 195.07 KB
Download BLF645 Datasheet PDF
BLF645 page 2
Page 2
BLF645 page 3
Page 3

BLF645 Key Features

  • CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total devic
  • 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total d
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)