BLF645 - Broadband power LDMOS transistor

Name: BLF645
SKU: BLF645-666163

NXP Semiconductors

The BLF645 by NXP Semiconductors is a Broadband power LDMOS transistor. Below is the official datasheet preview.

Datasheet Details

Part number	BLF645
Manufacturer	NXP Semiconductors
File Size	195.07 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF645_NXPSemiconductors.pdf
Additional preview pages of the BLF645 datasheet.

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion =.
32 dBc.
Integrated ES.

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Published: Mar 13, 2010 |