BLF645 Datasheet Broadband power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLF645
Manufacturer	NXP Semiconductors
File Size	195.07 KB
Description	Broadband power LDMOS transistor
Download	BLF645 Download (PDF)

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion =.
32 dBc.
Integrated ES.

Brand Logo	Part Number	Description	Manufacturer
	BLF645	Power LDMOS transistor	Ampleon