LLE16120X transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz.
handbook, 4 columns
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DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
Top view
MAM112
Fig.1 Simplified outline and symbol.
WAR.
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