LLE16350X Datasheet - NXP

NPN microwave power transistor

LLE16350X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LLE16350X General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LLE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer. MODE OF OPERATIO.

LLE16350X Datasheet (103.66 KB)

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LLE16350X

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NXP ↗

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103.66 KB

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Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product speciﬁcation Supersedes data of September 1994 1997 Feb 03 Phil.

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LLE16350X NPN microwave power transistor NXP

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LLE16350X Features

LLE16350X General Description

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