LLE18010X Datasheet - NXP

NPN microwave power transistor

LLE18010X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LLE18010X General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns LLE18010X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer. MODE OF OPERAT.

LLE18010X Datasheet (78.10 KB)

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LLE18010X

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NXP ↗

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78.10 KB

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Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product speciﬁcation Supersedes data of December 1994 1999 Apr 2.

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LLE18010X Features

LLE18010X General Description

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