LLE18010X transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
up to 2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic fl.
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
2 Top view
handbook, 4 columns
LLE18010X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in .
Image gallery
TAGS
Download (Size : 78.10KB)