LLE18300X transistor equivalent, npn microwave power transistor.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
between 1.7 GHz and 2 GHz. DESCRIPTION
2
handbook, 4 columns
LLE18300X
QUICK REFERENCE DATA Microwave performance up t.
2
handbook, 4 columns
LLE18300X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (dB) ≥7.8 ηC (%) Zi; ZL (Ω)
Class AB (CW) 1.85
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