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PBSS4240Y - NPN transistor

Description

NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.

PNP complement: PBSS5240Y.

1.

= p: made in Hongkong.

= t: made in Malaysia.

Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.
  • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4240Y FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). QUICK REFERENCE DATA SYMBOL PARAMETER VCEO ICM RCEsat collector-emitter voltage peak collector current equivalent on-resistance MAX.
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