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PBSS5140U - 40 V low VCEsat PNP transistor

Description

PNP low VCEsat transistor in a SOT323 (SC-70) plastic package.

QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.

40 2

Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.
  • Enhanced performance over SOT23 1A standard packaged transistor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in a SOT323 (SC-70) plastic package.
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