PBSS5112PAP Datasheet - nexperia

PBSS5112PAP 1A PNP/PNP low VCEsat (BISS) transistor

PBSS5112PAP Features

* Very low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain hFE at high IC

* Reduced Printed-Circuit Board (PCB) requirements

* High energy efficiency due to less heat generation

Datasheet Details

PBSS5112PAP

740.15 KB

1a pnp/pnp low vcesat (biss) transistor.

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