PBSS5112PAP

1A PNP/PNP low VCEsat (BISS) transistor

nexperia

* Very low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain hFE at high IC

* Reduced Printed-Circuit Board (PCB) requirements

* High energy efficiency due to less heat generation

PBSS5112PAP

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1a pnp/pnp low vcesat (biss) transistor.

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PBSS5112PAP PNP PNP low VCEsat BISS transistor nexperia

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