Datasheet4U Logo Datasheet4U.com

PBSS5230PAP - 2A PNP/PNP low VCEsat (BISS) transistor

PBSS5230PAP Description

PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1.General .
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

PBSS5230PAP Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High energy efficiency due to less heat generation

PBSS5230PAP Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current

📥 Download Datasheet

Preview of PBSS5230PAP PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

nexperia PBSS5230PAP-like datasheet