Datasheet Details
- Part number
- PBSS5230PAP
- Manufacturer
- nexperia ↗
- File Size
- 739.39 KB
- Datasheet
- PBSS5230PAP-nexperia.pdf
- Description
- 2A PNP/PNP low VCEsat (BISS) transistor
PBSS5230PAP Description
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1.General .
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.
PBSS5230PAP Features
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High energy efficiency due to less heat generation
PBSS5230PAP Applications
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter voltage
IC collector current
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