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PBSS5160T PNP transistor

PBSS5160T Description

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev.04 * 15 January 2010 Product data sheet 1.Product profile 1.1 General descriptio.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PBSS5160T Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces Printed-Circuit Board (PCB) area required
* Cost-effective replacement for medium power transistors BCP52 a

PBSS5160T Applications

* Major application segments: ‹ Automotive ‹ Telecom infrastructure ‹ Industrial
* Power management: ‹ DC-to-DC conversion ‹ Supply line switching
* Peripheral driver: ‹ Driver in low supply voltage applications (e. g. lamps and LEDs) ‹ Inductive load drivers (e. g. relays, buz

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