Datasheet Details
- Part number
- PBSS5130PAP
- Manufacturer
- nexperia ↗
- File Size
- 738.25 KB
- Datasheet
- PBSS5130PAP-nexperia.pdf
- Description
- 1A PNP/PNP low VCEsat (BISS) transistor
PBSS5130PAP Description
PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1.General .
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.
PBSS5130PAP Features
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High energy efficiency due to less heat generation
PBSS5130PAP Applications
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter voltage
IC collector current
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