* 300 mW total power dissipation
* Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package
* Improved thermal behaviour due to flat leads
* Self alignment during soldering due to straight leads
* Low collector-emitter saturation voltage
* High current
PBSS5140V Datasheet (47.00 KB)
PBSS5140V
47.00 KB
40 v low vcesat pnp transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5140V 40 V low VCEsat PNP transistor
Product specification Supersedes data of 2001 Oct 19 2002 Mar 20
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