BLF871 Datasheet PDF - NXP Semiconductors UHF power LDMOS transistor Specs

BLF871 - UHF power LDMOS transistor

Datasheet Summary

Description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 100 W broadband from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
35 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.

Datasheet Details

Part number	BLF871
Manufacturer	NXP Semiconductors
File Size	203.23 KB
Description	UHF power LDMOS transistor
Datasheet	BLF871 Datasheet
Additional preview pages of the BLF871 datasheet.

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Full PDF Text Transcription

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BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. Mode of operation f PL PL(PEP) PL(AV) Gp ηD IMD3 (MHz) (W) (W) (W) (dB) (%) (dBc) CW, class AB 860 100 - - 21 60 - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 −35 DVB-T (8k OFDM) 858 -- 24 22 33 −34[1] PAR (dB) 8.

Published: Dec 13, 2010 |