BLF872 Datasheet PDF - NXP Semiconductors UHF power LDMOS transistor Specs

BLF872 - UHF power LDMOS transistor

Datasheet Summary

Description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz.

Features

s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation distortion IMD3 =.
28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 30 % x Third order i.

Datasheet Details

Part number	BLF872
Manufacturer	NXP Semiconductors
File Size	179.58 KB
Description	UHF power LDMOS transistor
Datasheet	BLF872 Datasheet
Additional preview pages of the BLF872 datasheet.

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Full PDF Text Transcription

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BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product proﬁle 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.

Published: Dec 13, 2010 |