BLF872 Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF872 Features

* s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation distortion IMD3 =

* 28 dBc s Typical DVB perf

BLF872 General Description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter ap.

BLF872 Datasheet (179.58 KB)

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Datasheet Details

Part number:

BLF872

Manufacturer:

NXP ↗ Semiconductors

File Size:

179.58 KB

Description:

Uhf power ldmos transistor.

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BLF872 UHF power LDMOS transistor NXP Semiconductors

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BLF872 Features

BLF872 General Description

Datasheet Details

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