gan hemt.
* Suitable for linear and saturated applications
* Tunable from DC-6 GHz
* 48V Operation
* Industry Standard Plastic Package
* High Drain Efficiency (.
* Tunable from DC-6 GHz
* 48V Operation
* Industry Standard Plastic Package
* High Drain Efficiency (>60.
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.
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