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NPT2021 - GaN Wideband Transistor

Download the NPT2021 datasheet PDF. This datasheet also covers the NPT2021-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.

Key Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NPT2021-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
NPT2020 GaN Wideband Transistor
NPT2020-SMB2 GaN Wideband Transistor
NPT2022 HEMT D-Mode Amplifier
NPT1015B GaN Wideband Transistor
NPTB00004B GaN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2.5 GHz  48 V Operation  16.5 dB Gain at 2.5 GHz  55 % Drain Efficiency at 2.5 GHz  100 % RF Tested  TO-272 Package  RoHS* Compliant and 260°C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.