gan wideband transistor.
* GaN on Si HEMT D-Mode Transistor
* Suitable for linear and saturated applications
* Tunable from DC - 2.5 GHz
* 48 V Operation
* 16.5 dB Gain at 2.5.
* Tunable from DC - 2.5 GHz
* 48 V Operation
* 16.5 dB Gain at 2.5 GHz
* 55 % Drain Efficiency at 2.5 GH.
The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.
The NPT2021 is i.
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