NPT2010 amplifier equivalent, gan on silicon general purpose amplifier.
* GaN on Si HEMT D-Mode Amplifier
* Suitable for Linear & Saturated Applications
* Tunable from DC - 2.2 GHz
* 48 V Operation
* 15 dB Gain @ 2.15 GHz .
* Tunable from DC - 2.2 GHz
* 48 V Operation
* 15 dB Gain @ 2.15 GHz
* 61% Drain Efficiency @ 2.15 GHz <.
The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down fl.
Image gallery
TAGS
Download (Size : 1.36MB)