MJ21194 - Silicon Power Transistors

Key Features

Total Harmonic Distortion Characterized.
High DC Current Gain.
Excellent Gain Linearity.
High SOA.
These Devices are Pb.
Free and are RoHS Compliant.

MJ21194 silicon power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ21194
Manufacturer	ON
File Size	121.22 KB
Description	Silicon Power Transistors
Datasheet	MJ21194 Datasheet

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MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation Derate Above 25°C @ TC = 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5 Vdc 400 Vdc 16 Adc 30 Adc 5 Adc 250 W 1.