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  ON Semiconductor Electronic Components Datasheet  

MJ21194 Datasheet

Silicon Power Transistors

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MJ21193 - PNP
MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5 V
Collector Current Continuous
Collector Current Peak (Note 1)
Base Current Continuous
Total Power Dissipation
Derate Above 25°C
@
TC
=
25°C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250 W
1.43 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (continued)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
0.7 °C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 6
1
http://onsemi.com
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
PNP
CASE 3
NPN
CASE 3
1
BASE
EMITTER 2
1
BASE
EMITTER 2
MARKING
3 DIAGRAM
12
TO204AA (TO3)
CASE 107
STYLE 1
MJ2119xG
AYYWW
MEX
MJ2119x = Device Code
x = 3 or 4
G = PbFree Package
A = Assembly Location
YY = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ21193G
TO3
(PbFree)
100 Units / Tray
MJ21194G
TO3
(PbFree)
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJ21193/D


  ON Semiconductor Electronic Components Datasheet  

MJ21194 Datasheet

Silicon Power Transistors

No Preview Available !

MJ21193 PNP MJ21194 NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%
Symbol
VCEO(sus)
ICEO
IEBO
ICEX
IS/b
hFE
VBE(on)
VCE(sat)
THD
fT
Cob
Min Typ Max Unit
250
Vdc
− − 100 mAdc
− − 100 mAdc
100 mAdc
5
2.5
Adc
75
25
8
− − 2.2 Vdc
Vdc
− − 1.4
−−4
%
0.8
0.08
4 − − MHz
− − 500 pF
6.5
6.0 VCE = 10 V
PNP MJ21193
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
10
NPN MJ21194
8.0
7.0
6.0 10 V
5.0
VCE = 5 V
4.0
3.0
2.0
1.0 TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
10
http://onsemi.com
2


Part Number MJ21194
Description Silicon Power Transistors
Maker ON
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MJ21194 Datasheet PDF






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