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2SK3666 - N-Channel JFET

Features

  • Small IGSS.
  • Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device f.

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Datasheet Details

Part number 2SK3666
Manufacturer onsemi
File Size 357.77 KB
Description N-Channel JFET
Datasheet download datasheet 2SK3666 Datasheet

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Full PDF Text Transcription

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Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.6 to 3.0mA, 6.5mS, CP http://onsemi.com Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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