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2SK4177 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=10Ω(typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=50V, L=20mH, IAV=2A (Fig.1).
  • 2 L≤20mH, single pulse.
  • Input capacitanc.

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Datasheet Details

Part number 2SK4177
Manufacturer onsemi
File Size 222.15 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK4177 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA0869A 2SK4177 N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)=10Ω(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse • Input capacitance Ciss=380pF (typ.) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±20 2 4 80 150 --55 to +150 41 2 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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