FDMC010N08LC datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Shielded Gate MOSFET Technology
* Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 16 A
* Max RDS(on) = 18.4 mW at VGS = 4.5 V, ID = 13 A
* 50% Lower Qrr than .

Application

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar MAXIMUM RATINGS.

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance wit.

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