FDMC6675BZ mosfet equivalent, p-channel mosfet.
* Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A
* Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A
* HBM ESD Protection Level of 8 kV Typical (Note 3) <.
Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
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