Full PDF Text Transcription for FDMC6675BZ (Reference)
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MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancement...
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n designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection. Features • Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A • Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A • HBM ESD Protection Level of 8 kV Typical (Note 3) • Extended VGSS Range (−25 V) for Battery Applications • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Load Switch in Notebook
FDMC6675BZ Datasheet
