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FDMC6675BZ - P-Channel MOSFET

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General Description

The FDMC6675BZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Overview

MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ.

Key Features

  • Max RDS(on) = 14.4 mW at VGS =.
  • 10 V, ID =.
  • 9.5 A.
  • Max RDS(on) = 27.0 mW at VGS =.
  • 4.5 V, ID =.
  • 6.9 A.
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • Extended VGSS Range (.
  • 25 V) for Battery.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDMC6675BZ N-Channel MOSFET Fairchild Semiconductor

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