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FDMC6675BZ - P-Channel MOSFET

General Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Overview

MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ.

Key Features

  • Max RDS(on) = 14.4 mW at VGS =.
  • 10 V, ID =.
  • 9.5 A.
  • Max RDS(on) = 27.0 mW at VGS =.
  • 4.5 V, ID =.
  • 6.9 A.
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • Extended VGSS Range (.
  • 25 V) for Battery.