FDMC86184 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A
* Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A
* 50% Lower Qrr than Othe.

Application

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar Pin 1 Pin 1 .

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance wi.

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