Datasheet4U Logo Datasheet4U.com

FDMS8460 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A.
  • Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A.
  • Advanced Package and Silicon combination for low rDS(on).
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDMS8460

Datasheet Details

Part number FDMS8460
Manufacturer ON Semiconductor
File Size 492.42 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS8460 Datasheet
Additional preview pages of the FDMS8460 datasheet.

📁 Similar Datasheet

  • FDMS8460 - MOSFET (Fairchild Semiconductor)
  • FDMS8018 - MOSFET (Fairchild Semiconductor)
  • FDMS8020 - MOSFET (Fairchild Semiconductor)
  • FDMS8023S - MOSFET (Fairchild Semiconductor)
  • FDMS8025S - MOSFET (Fairchild Semiconductor)
  • FDMS8026S - MOSFET (Fairchild Semiconductor)
  • FDMS8027S - MOSFET (Fairchild Semiconductor)
  • FDMS8050 - MOSFET (Fairchild Semiconductor)
  • FDMS8050ET30 - MOSFET (Fairchild Semiconductor)
  • FDMS8090 - MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET - N‐Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW FDMS8460 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A • Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.
Published: |