Datasheet Summary
MOSFET
- N‐Channel, POWERTRENCH)
40 V, 49 A, 2.2 mW
General Description This N- Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source...
