FDMS8460 datasheet, mosfet equivalent, ON Semiconductor

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FDMS8460 Features and benefits

* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A
* Advanced Package and Silicon combination for low rDS(on) .

FDMS8460 Application

* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to .

FDMS8460 Description

This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features
* Max rDS(on) = 2.2 mW at VGS.

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