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FDMS86181 N-Channel MOSFET

FDMS86181 Description

MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH) 100 V, 124 A, 4.2 mW FDMS86181 General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

FDMS86181 Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design

FDMS86181 Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Curre

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N-Channel MOSFET ON Semiconductor
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