FDMS86181 Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS86181 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A
- Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant