FDT86102LZ mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Level > 6 kV Typical (Note 4)
* Very.
* DC − DC Conversion
* Inverter
* Synchronous Rectifier
Specifications
MOSFET MAXIMUM RATINGS (TA = 25°C u.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss. G−S zener has been added to enhance ESD voltage level.
Features
* Max rDS(on).
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