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FDT86102LZ - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number: FDT86102LZ
Manufacturer: ON Semiconductor ↗
File Size: 277.66 KB
Datasheet: FDT86102LZ-ONSemiconductor.pdf
Description: N-Channel MOSFET

FDT86102LZ Product details

Description

This N. Channel.

Features

Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A.
Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A.
HBM ESD Protection Level > 6 kV Typical (Note 4).
Very Low Qg and Qgd Compared to Competing Trench Technologies.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant AYW 102LZ 1 A Y W 102LZ = Assembly Location = Year = Work Week = Specific Device Code.

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N-Channel MOSFET ON Semiconductor

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