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HGTG30N60B3 - IGBT

General Description

The HGTG30N60B3 combines the best

Overview

IGBT - NPT 600 V HGTG30N60B3.

Key Features

  • of high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.