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HGTG30N60B3 Datasheet, ON Semiconductor

HGTG30N60B3 Datasheet, ON Semiconductor

HGTG30N60B3

datasheet Download (Size : 458.58KB)

HGTG30N60B3 Datasheet

HGTG30N60B3 igbt equivalent, igbt.

HGTG30N60B3

datasheet Download (Size : 458.58KB)

HGTG30N60B3 Datasheet

Features and benefits

of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating.

Application

operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supp.

Description

The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low co.

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TAGS

HGTG30N60B3
IGBT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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