* q High collector to emitter voltage VCEO. 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO
2SA1816
Panasonic Semiconductor
21.89 KB
Silicon pnp epitaxial planer type transistor.
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 4.0±0.2 3.0±0.2 Unit: mm s F.
📁 Related Datasheet
2SA1810 Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1811 TRANSISTOR (Toshiba Semiconductor)
2SA1812 High-voltage Switching Transistor (Rohm)
2SA1813 PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1814 PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1815 PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1815 PNP Epitaxial Planar Silicon Transistors (Guangdong Kexin Industrial)
2SA1818 1.2W PACKAGE POWER TAPED TRANSISTOR (Rohm)
2SA1801 TRANSISTOR (Toshiba Semiconductor)
2SA1802 Silicon PNP Epitaxial Type Transistor (Toshiba Semiconductor)
