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2SD2453 - Silicon NPN Transistor

Features

  • s.
  • High forward current transfer ratio hFE.
  • Low collector-emitter saturation voltage VCE(sat) 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current.
  • Base current Collector power dissipation Junction temperature Storage temperature Note) Non-rep.

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Datasheet Details

Part number 2SD2453
Manufacturer Panasonic
File Size 77.79 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2453 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SD2453 Silicon NPN triple diffusion planar type Unit: mm For high current transfer ratio and power amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Base current Collector power dissipation Junction temperature Storage temperature Note) Non-repetitive peak collector current Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 2 4 1 10 1 150 −55 to +150 °C °C Unit V V V A A A W 0.75±0.1 2.3±0.1 4.6±0.1 1.
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