Datasheet4U Logo Datasheet4U.com

2SD2565 - Silicon NPN Transistor

Features

  • q q q q q High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.65 max. 1.0 1.0 0.2 0.45.
  • 0.05 0.45.
  • 0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 (Ta=25˚C) Ratings 400 400 5 1 0.5 1 150.
  • 55 ~ +150 Unit V V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.

📥 Download Datasheet

Datasheet preview – 2SD2565

Datasheet Details

Part number 2SD2565
Manufacturer Panasonic
File Size 38.86 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2565 Datasheet
Additional preview pages of the 2SD2565 datasheet.
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q q q High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.65 max. 1.0 1.0 0.2 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 (Ta=25˚C) Ratings 400 400 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.
Published: |