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2SJ574 - P-Channel MOSFET

Key Features

  • Low on-resistance RDS = 1.1 Ω typ. (VGS =.
  • 10 V, ID =.
  • 150 mA) RDS = 2.2 Ω typ. (VGS =.
  • 4 V, ID =.
  • 150 mA).
  • 4 V gate drive device.
  • Small package (MPAK) Outline.

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Datasheet Details

Part number 2SJ574
Manufacturer Renesas
File Size 238.52 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ574 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ574 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is BP 3 G 1 2 Preliminary Datasheet R07DS0574EJ0500 Rev.5.00 Jan 10, 2014 D 1. Source 2. Gate 3. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch Note 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.